Rohm offers the first mass-produced silicon carbide (SiC) 1200-V/100-A rated power modules comprised entirely of SiC power elements, claims the company. Incorporating SiC inverters and converters for power conversion in industrial equipment provides several advantages over typical silicon-based insulated gate bipolar transistor (IGBT) modules: switching loss reduced by 85%; approximately 50% less volume compared with conventional 400 A-class Si IGBT modules; and less heat generation due to lower power loss, reducing the size and complexity of cooling countermeasures, which contributes to greater end-product miniaturization. According to Rohm, SiC technology is expected to have a significant impact in the power electronics sector with applications for electric vehicles as well as trains and industrial motor drives, among others, due to its material properties (i.e., smaller power conversion loss) compared with silicon.